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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3107
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK3107 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for
1.6 0.1
PACKAGE DRAWING (Unit : mm)
0.3 0.05 0.1 +0.1 -0.05
0.8 0.1
use as a high-speed switching device in digital circuits.
D 0 to 0.1 G S 0.2 0.5
+0.1 -0
FEATURES
* Can be driven by a 2.5-V power source * Low gate cut-off voltage
0.5
0.6 0.75 0.05
1.0 1.6 0.1
ORDERING INFORMATION
PART NUMBER 2SK3107 PACKAGE SC-75(USM)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) 5
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30 20 0.1 0.4 200 150 -55 to +150
V V A A mW C C
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Total Power Dissipation Channel Temperature Storage Temperature
Gate Protection Diode Marking: D1
Source
Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 3.0 cm x 0.64 mm Remark
2
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13802EJ2V0DS00 (2nd edition) Date Published August 1999 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1999
2SK3107
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Ciss Coss Crss td(on) tr td(off) tf TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 3 V, ID = 10 A VDS = 3 V, ID = 10 m A VGS = 2.5 V, ID = 1 m A VGS = 4 V, ID = 10 mA VGS = 10 V, ID = 10 mA VDS = 3 V VGS = 0 V f = 1 MHz VDD = 3 V ID = 10 mA VGS(on) = 4 V RG = 10 , RL = 300 1.0 20 8 4 3 9 12 2.1 40 55 68 64 15 8 5 1.4 MIN. TYP. MAX. 1 10 1.8 UNIT
A A
V mS pF pF pF ns ns ns ns
2
Data Sheet D13802EJ2V0DS00
2SK3107
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 400
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
dT - Derating Factor - %
ID - Drain Current - mA
300
VGS = 4 V
60
3.5 V 200 3V 100 2.5 V
40
20
0
30 60 120 90 TA - Ambient Temperature - C
150
0
2
4
6
8
10
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT 1000
| yfs | - Forward Transfer Admittance - mS
TRANSFER CHARACTERISTICS 1 0.1
ID - Drain Current - A
VDS = 3 V
VDS = 3 V
0.01 0.001
TA = 125C 75C 25C -25C
100
5
0.0001
10
TA = -25C 25C 75C 125C
0.00001 0.000001 1.0
4.0 2.0 3.0 VGS - Gate to Sorce Voltage - V
5.0
1 0.0001
0.001
0.01
0.1
1
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance -
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20
VGS = 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 15
VGS = 4 V
15 TA = 125C 75C 25C -25C
10
10
5
5
5
TA = 125C 75C 25C -25C
10 0.0001
0.001 0.01 ID - Drain Current - A
0.1
0 0.0001
0.001 0.01 0.1 ID - Drain Current - A
1
Data Sheet D13802EJ2V0DS00
3
2SK3107
RDS(on) - Drain to Source On-state Resistance -
10
VGS = 10 V
RDS (on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
30
ID = 1 mA 10 mA 100 mA
8
20
6
5
4 TA = 125C 75C 25C -25C
10
2 0 0.0001
0.1 0.001 0.01 ID - Drain Current - A
1
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Swwitchig Time - ns
f = 1 MHz VGS = 0 V
10
Ciss Coss
5
100
tr tf td(on) td(off) VDD = 3 V VGS(on) = 4V RG = 10
1
Crss
0.1 0.01
0.1
1
10
100
10 0.1
1 ID - Drain Current - A
10
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1
IF - Source to Drain Current - A
0.1
0.01
0.001
0.0001 0.4
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
4
Data Sheet D13802EJ2V0DS00
2SK3107
[MEMO]
Data Sheet D13802EJ2V0DS00
5
2SK3107
[MEMO]
6
Data Sheet D13802EJ2V0DS00
2SK3107
[MEMO]
Data Sheet D13802EJ2V0DS00
7
2SK3107
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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